Detalhe da pesquisa
1.
Reduction of the trans-cortical vessel was associated with bone loss, another underlying mechanism of osteoporosis.
Microvasc Res
; 152: 104650, 2024 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-38123064
2.
N-acetyl-L-cysteine attenuates oxidative stress-induced bone marrow endothelial cells apoptosis by inhibiting BAX/caspase 3 pathway.
Biochem Biophys Res Commun
; 656: 115-121, 2023 05 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-36963348
3.
Hyperelatolides A-D, Antineuroinflammatory Constituents with Unusual Carbon Skeletons from Hypericum elatoides.
J Nat Prod
; 86(8): 1910-1918, 2023 08 25.
Artigo
em Inglês
| MEDLINE | ID: mdl-37530709
4.
ATF1/miR-214-5p/ITGA7 axis promotes osteoclastogenesis to alter OVX-induced bone absorption.
Mol Med
; 28(1): 56, 2022 05 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-35568813
5.
SPI1 exacerbates iron accumulation and promotes osteoclast formation through inhibiting the expression of Hepcidin.
Mol Cell Endocrinol
; 580: 112103, 2024 Jan 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-38450475
6.
Iron accumulation induced by hepcidin1 knockout accelerates the progression of aging osteoporosis.
J Orthop Surg Res
; 19(1): 59, 2024 Jan 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-38216929
7.
The role of PI3K/Akt signalling pathway in spinal cord injury.
Biomed Pharmacother
; 156: 113881, 2022 Dec.
Artigo
em Inglês
| MEDLINE | ID: mdl-36272264
8.
Ferric Ion Induction of Triggering Receptor Expressed in Myeloid Cells-2 Expression and PI3K/Akt Signaling Pathway in Preosteoclast Cells to Promote Osteoclast Differentiation.
Orthop Surg
; 12(4): 1304-1312, 2020 Aug.
Artigo
em Inglês
| MEDLINE | ID: mdl-32729185
9.
Reliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealing.
J Nanosci Nanotechnol
; 20(7): 4057-4060, 2020 Jul 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-31968420
10.
Investigation of Microwave Annealing on Resistive Random Access Memory Device with Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Deposited IGZO Layer.
J Nanosci Nanotechnol
; 20(7): 4244-4247, 2020 07 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-31968450